FQD12N20LTM 数据手册
其他文档
FQD12N20L 10 pages
技术规格
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: onsemi FQD12N20LTM
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 2.5W;55W
- Total Gate Charge (Qg@Vgs): 21nC@5V
- Drain Source Voltage (Vdss): 200V
- Input Capacitance (Ciss@Vds): 1080pF@25V
- Continuous Drain Current (Id): 9A
- Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 280mΩ@10V,4.5A
- Package: TO-252
- Manufacturer: onsemi
- Series: QFET®
- Packaging: Cut Tape (CT)
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Base Part Number: FQD1
- detail: N-Channel 200V 9A (Tc) 2.5W (Ta), 55W (Tc) Surface Mount D-Pak